The IRF6613PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor ph.
followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6613PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6613PbF has been optimized for parameters that are critical in synchronou.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF6613 |
International Rectifier |
HEXFET Power MOSFET | |
2 | IRF6613TRPBF |
International Rectifier |
Power MOSFET | |
3 | IRF6610 |
International Rectifier |
HEXFET Power MOSFET Silicon Technology | |
4 | IRF6611 |
International Rectifier |
DirectFET Power MOSFET | |
5 | IRF6611PbF |
International Rectifier |
DirectFET Power MOSFET | |
6 | IRF6611TRPbF |
International Rectifier |
DirectFET Power MOSFET | |
7 | IRF6612 |
International Rectifier |
HEXFET Power MOSFET | |
8 | IRF6612PbF |
International Rectifier |
MOSFET | |
9 | IRF6612TR1 |
International Rectifier |
HEXFET Power MOSFET | |
10 | IRF6614 |
International Rectifier |
DirectFET Power MOSFET | |
11 | IRF6614PBF |
International Rectifier |
Power MOSFET | |
12 | IRF6614TRPBF |
International Rectifier |
Power MOSFET |