The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor .
sembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6614PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors op.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF6614 |
International Rectifier |
DirectFET Power MOSFET | |
2 | IRF6614TRPBF |
International Rectifier |
Power MOSFET | |
3 | IRF6610 |
International Rectifier |
HEXFET Power MOSFET Silicon Technology | |
4 | IRF6611 |
International Rectifier |
DirectFET Power MOSFET | |
5 | IRF6611PbF |
International Rectifier |
DirectFET Power MOSFET | |
6 | IRF6611TRPbF |
International Rectifier |
DirectFET Power MOSFET | |
7 | IRF6612 |
International Rectifier |
HEXFET Power MOSFET | |
8 | IRF6612PbF |
International Rectifier |
MOSFET | |
9 | IRF6612TR1 |
International Rectifier |
HEXFET Power MOSFET | |
10 | IRF6613 |
International Rectifier |
HEXFET Power MOSFET | |
11 | IRF6613PBF |
International Rectifier |
Power MOSFET | |
12 | IRF6613TRPBF |
International Rectifier |
Power MOSFET |