This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for adaptor power unit and small power inverter application. T.
̰ RDS(on) (Max 0.4 ˟ )@VGS=10V ̰ Gate Charge (Typical 44nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1.Gate 2.Drain 3.Source BVDSS = 200V RDS(ON) = 0.4 ohm ID = 9A General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for adaptor power unit and small power inverter application. TO-220C Absolute Maximu.
Lead-Free PD- 95916 IRF630PbF www.irf.com 1 9/27/04 IRF630PbF 2 www.irf.com IRF630PbF www.irf.com 3 IRF630PbF .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF630 |
STMicroelectronics |
N-channel MOSFET | |
2 | IRF630 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
3 | IRF630 |
Vishay |
Power MOSFET | |
4 | IRF630 |
Inchange Semiconductor |
N-channel mosfet transistor | |
5 | IRF630 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
6 | IRF630A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
7 | IRF630A |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | IRF630B |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
9 | IRF630F |
Inchange |
N-Channel MOSFET Transistor | |
10 | IRF630FI |
STMicroelectronics |
N-CHANNEL MOSFET | |
11 | IRF630FI |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
12 | IRF630FP |
STMicroelectronics |
N-CHANNEL MOSFET |