MOSFET www.DataSheet4U.com INCHANGE IRF630F N-channel mosfet transistor ¡¤ Features 123 With TO-220F package ¤¡ Low on-stateand thermal resistance ¤¡ Fast switching ¤¡ VDSS=200V; RDS(ON)¡Ü 0.4¦¸ ;ID=9A ¤¡ 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25¡æ SYMBOL VDSS VGS ID Ptot Tj Tstg PARAMETER Drain-source voltage (VGS=0) Gate-source volta.
123 With TO-220F package ¤¡ Low on-stateand thermal resistance ¤¡ Fast switching ¤¡ VDSS=200V; RDS(ON)¡Ü 0.4¦¸ ;ID=9A ¤¡ 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25¡æ SYMBOL VDSS VGS ID Ptot Tj Tstg PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25¡æ Total Dissipation@TC=25¡æ Operating Junction temperature Storage temperature ¡À RATING 200 20 9 35 150 -65~150 ¡æ ¡æ UNIT V V A W TO-220F Electrical Characteristics Tc=25¡æ SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD Drain-source breakdown voltage Gat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF630 |
STMicroelectronics |
N-channel MOSFET | |
2 | IRF630 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
3 | IRF630 |
Vishay |
Power MOSFET | |
4 | IRF630 |
Inchange Semiconductor |
N-channel mosfet transistor | |
5 | IRF630 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
6 | IRF630A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
7 | IRF630A |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | IRF630B |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
9 | IRF630FI |
STMicroelectronics |
N-CHANNEL MOSFET | |
10 | IRF630FI |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
11 | IRF630FP |
STMicroelectronics |
N-CHANNEL MOSFET | |
12 | IRF630M |
ST Microelectronics |
N-Channel MOSFET |