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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·RDS(on) =0.4Ω ·6A and 200V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·High Input Impedance isc Product Specification IRF630FI ·DESCRITION ·Designed for high speed applications, such as switching power supplies , AC and DC motor c.
·RDS(on) =0.4Ω
·6A and 200V
·single pulse avalanche energy rated
·SOA is Power- Dissipation Limited
·Linear Transfer Characteristics
·High Input Impedance
isc Product Specification
IRF630FI
·DESCRITION
·Designed for high speed applications,
such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
200 ±20
V V
ID Drain Current-Continuous
6A
IDM Drain Current-Single Plused
24 A
PD Total Dissipation @TC=25℃
35 W
.
IRF630FI - STMicroelectronics
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF630F |
Inchange |
N-Channel MOSFET Transistor |
|
| 2 | IRF630FP |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 3 | IRF630 |
STMicroelectronics |
N-channel MOSFET |
|
| 4 | IRF630 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 5 | IRF630 |
Vishay |
Power MOSFET |
|
| 6 | IRF630 |
Inchange Semiconductor |
N-channel mosfet transistor |
|
| 7 | IRF630 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 8 | IRF630A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 9 | IRF630A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | IRF630B |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 11 | IRF630M |
ST Microelectronics |
N-Channel MOSFET |
|
| 12 | IRF630MFP |
ST Microelectronics |
N-Channel Power MOSFET |
|