IRF5305PbF - International Rectifier

IRF5305PbF Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a.

Features

V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD - 94788 IRF5305PbF HEXFET® Power MOSFET D VDSS = -55V RDS(on) = 0.06Ω ID = -31A S TO-220AB Max. -31 -22 -110 110 0.71 ± 20 280 -16 11 -5.0 -55 to + 175 300 (1.6m.