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IRF5305PbF |
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| Part Number | IRF5305PbF |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
| Features |
V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
PD - 94788
IRF5305PbF
HEXFET® Power MOSFET
D
VDSS = -55V
RDS(on) = 0.06Ω
ID = -31A
S
TO-220AB
Max. -31 -22 -110 110 0.71 ± 20 280 -16 11 -5.0 -55 to + 175
300 (1.6m... |
| Document |
 IRF5305PbF Data Sheet
PDF 182.78KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF5305 |
International Rectifier |
Power MOSFET |
|
| 2 | IRF5305 |
INCHANGE |
P-Channel MOSFET |
|
| 3 | IRF5305L |
International Rectifier |
Power MOSFET |
|
| 4 | IRF5305L |
INCHANGE |
P-Channel MOSFET |
|
| 5 | IRF5305LPBF |
International Rectifier |
HEXFET Power MOSFET |
|