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l l D VDSS = -55V RDS(on) = 0.06Ω G ID = -31A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an.
te up to 2.0W in a typical surface mount application. The through-hole version (IRF5305L) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Stor.
IRF5305L - INCHANGE
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -16A) ·Advan.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF5305 |
International Rectifier |
Power MOSFET |
|
| 2 | IRF5305 |
INCHANGE |
P-Channel MOSFET |
|
| 3 | IRF5305LPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 4 | IRF5305PbF |
International Rectifier |
Power MOSFET |
|
| 5 | IRF5305S |
International Rectifier |
Power MOSFET |
|
| 6 | IRF5305S |
INCHANGE |
P-Channel MOSFET |
|
| 7 | IRF5305SPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 8 | IRF530 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | IRF530 |
Motorola Inc |
N-Channel MOSFET |
|
| 10 | IRF530 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 11 | IRF530 |
International Rectifier |
Power MOSFET |
|
| 12 | IRF530 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|