IPS09N03LAG - Infineon

IPS09N03LAG Power Transistor

OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA.

Features

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA G Product Summary V DS R DS(on),max (SMD version) ID 25 V 8.6 mΩ 50 A Type IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA Package Marking P-TO252-3-11 09N03LA P-TO252-3-23 09N03LA P-TO251-3-11 09N03LA P-TO251-3-1 09N03LA Maximum ratings, at T j=25 °C, unless otherw.