The IPS024G are fully protected quad low side SMART POWER MOSFETs respectively. They feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and .
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Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection
Product Summary Rds(on) V clamp Ishutdown Ton/Toff Package 150mΩ (max) 50V 6A 1.5µs
Description
The IPS024G are fully protected quad low side SMART POWER MOSFETs respectively. They feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient pro.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPS021 |
International Rectifier |
FULLY PROTECTED POWER MOSFET SWITCH | |
2 | IPS021L |
International Rectifier |
FULLY PROTECTED POWER MOSFET SWITCH | |
3 | IPS021S |
International Rectifier |
FULLY PROTECTED POWER MOSFET SWITCH | |
4 | IPS022G |
International Rectifier |
DUAL FULLY PROTECTED POWER MOSFET SWITCH | |
5 | IPS0151 |
International Rectifier |
FULLY PROTECTED POWER MOSFET SWITCH | |
6 | IPS0151S |
International Rectifier |
FULLY PROTECTED POWER MOSFET SWITCH | |
7 | IPS031 |
International Rectifier |
FULLY PROTECTED POWER MOSFET SWITCH | |
8 | IPS031N03L |
INCHANGE |
N-Channel MOSFET | |
9 | IPS031N03L |
Infineon |
Power-Transistor | |
10 | IPS031N03LG |
Infineon |
Power-Transistor | |
11 | IPS031R |
International Rectifier |
FULLY PROTECTED POWER MOSFET SWITCH | |
12 | IPS031S |
International Rectifier |
FULLY PROTECTED POWER MOSFET SWITCH |