isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .
·With TO-251(IPAK) packaging
·High speed switching
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·DC-DC converters
·Motor control
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
90
IDM
Drain Current-Single Pulsed
400
PD
Total Dissipation
94
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACT.
Kf^S
"%&$!"#b %
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPS031N03LG |
Infineon |
Power-Transistor | |
2 | IPS031 |
International Rectifier |
FULLY PROTECTED POWER MOSFET SWITCH | |
3 | IPS031R |
International Rectifier |
FULLY PROTECTED POWER MOSFET SWITCH | |
4 | IPS031S |
International Rectifier |
FULLY PROTECTED POWER MOSFET SWITCH | |
5 | IPS0151 |
International Rectifier |
FULLY PROTECTED POWER MOSFET SWITCH | |
6 | IPS0151S |
International Rectifier |
FULLY PROTECTED POWER MOSFET SWITCH | |
7 | IPS021 |
International Rectifier |
FULLY PROTECTED POWER MOSFET SWITCH | |
8 | IPS021L |
International Rectifier |
FULLY PROTECTED POWER MOSFET SWITCH | |
9 | IPS021S |
International Rectifier |
FULLY PROTECTED POWER MOSFET SWITCH | |
10 | IPS022G |
International Rectifier |
DUAL FULLY PROTECTED POWER MOSFET SWITCH | |
11 | IPS024G |
International Rectifier |
QUAD FULLY PROTECTED POWER MOSFET SWITCH | |
12 | IPS040N03L |
INCHANGE |
N-Channel MOSFET |