·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 31 IDM Drain Current-Single Pulsed 93 PD Total Dissipation @TC=25℃ 255 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature .
·Static drain-source on-resistance:
RDS(on) ≤0.099Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Ultra low gate charge
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
31
IDM
Drain Current-Single Pulsed
93
PD
Total Dissipation @TC=25℃
255
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃.
IPP60R099CP CoolMOSTM Power Transistor Features • Worldwide best R ds,on in TO220 • Ultra low gate charge • Extreme dv/.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP60R099C6 |
Infineon Technologies |
MOSFET | |
2 | IPP60R099C6 |
INCHANGE |
N-Channel MOSFET | |
3 | IPP60R099C7 |
Infineon |
MOSFET | |
4 | IPP60R099C7 |
INCHANGE |
N-Channel MOSFET | |
5 | IPP60R099CPA |
Infineon Technologies |
Power Transistor | |
6 | IPP60R099P6 |
Infineon Technologies |
P6 Power Transistor | |
7 | IPP60R099P6 |
INCHANGE |
N-Channel MOSFET | |
8 | IPP60R099P7 |
Infineon |
MOSFET | |
9 | IPP60R099P7 |
INCHANGE |
N-Channel MOSFET | |
10 | IPP60R040C7 |
INCHANGE |
N-Channel MOSFET | |
11 | IPP60R040C7 |
Infineon |
MOSFET | |
12 | IPP60R060C7 |
Infineon |
MOSFET |