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isc N-Channel MOSFET Transistor IPP60R099C6，IIPP60R099C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Provide all benefits of a fast switching super junction MOS while not Sacrific.
·Static drain-source on-resistance:
RDS(on) ≤0.099Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Provide all benefits of a fast switching super junction MOS while not
Sacrificing ease of use
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
37.9
IDM
Drain Current-Single Pulsed
112
PD
Total Dissipation @TC=25℃
278
Tj
Max. Operating Junction Temperature
150
Tstg
Stor.
IPP60R099C6 - Infineon Technologies
FGK@?L FTcP[ GgXST KTXR^]SdRc^a @XT[S ?UUTRc LaP]bXbc^a =^^[FGKm =6 6**M =^^[FGKm =6 H^fTa LaP]bXbc^a CHx6*J099=6 >PcP K.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPP60R099C7 |
Infineon |
MOSFET |
|
| 2 | IPP60R099C7 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPP60R099CP |
Infineon Technologies |
Power Transistor |
|
| 4 | IPP60R099CP |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPP60R099CPA |
Infineon Technologies |
Power Transistor |
|
| 6 | IPP60R099P6 |
Infineon Technologies |
P6 Power Transistor |
|
| 7 | IPP60R099P6 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IPP60R099P7 |
Infineon |
MOSFET |
|
| 9 | IPP60R099P7 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IPP60R040C7 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IPP60R040C7 |
Infineon |
MOSFET |
|
| 12 | IPP60R060C7 |
Infineon |
MOSFET |
|