INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP023NE7N3,IIPP023NE7N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications.
·Static drain-source on-resistance:
RDS(on) ≤2.3mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
75
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
120
IDM
Drain Current-Single Pulsed
480
PD
Total Dissipation @TC=25℃
300
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP023NE7N3G |
Infineon |
Power-Transistor | |
2 | IPP023N03LF2S |
Infineon |
MOSFET | |
3 | IPP023N04N |
Infineon |
Power Transistor | |
4 | IPP023N04N |
INCHANGE |
N-Channel MOSFET | |
5 | IPP023N04NG |
Infineon Technologies |
Power-Transistor | |
6 | IPP023N08N5 |
Infineon |
MOSFET | |
7 | IPP023N10N5 |
Infineon |
MOSFET | |
8 | IPP020N03LF2S |
Infineon |
MOSFET | |
9 | IPP020N06N |
Infineon |
Power-Transistor | |
10 | IPP020N06N |
INCHANGE |
N-Channel MOSFET | |
11 | IPP020N08N5 |
Infineon |
MOSFET | |
12 | IPP022N12NM6 |
Infineon |
MOSFET |