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Features •N-channel,normallevel •OptimizedforFOMOSS •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification TO-220-3 tab Table1KeyPerformanceParameters Parameter Value U.
•N-channel,normallevel
•OptimizedforFOMOSS
•Verylowon-resistanceRDS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
TO-220-3
tab
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 100 V
RDS(on),max
2.3
mΩ
ID 120 A
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPP023N10N5
Package PG-TO220-3
Marking 023N10N5
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
2
Rev.2.1,2014-05-05
Op.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPP023N03LF2S |
Infineon |
MOSFET |
|
| 2 | IPP023N04N |
Infineon |
Power Transistor |
|
| 3 | IPP023N04N |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPP023N04NG |
Infineon Technologies |
Power-Transistor |
|
| 5 | IPP023N08N5 |
Infineon |
MOSFET |
|
| 6 | IPP023NE7N3 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPP023NE7N3G |
Infineon |
Power-Transistor |
|
| 8 | IPP020N03LF2S |
Infineon |
MOSFET |
|
| 9 | IPP020N06N |
Infineon |
Power-Transistor |
|
| 10 | IPP020N06N |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IPP020N08N5 |
Infineon |
MOSFET |
|
| 12 | IPP022N12NM6 |
Infineon |
MOSFET |
|