OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 Product Summary V DS R DS(on),max (SMD version) ID 60 V 6.4 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220.
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07
Product Summary V DS R DS(on),max (SMD version) ID
60 V 6.4 mΩ 80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB80N06S4L-07 IPI80N06S4L-07 IPP80N06S4L-07
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4N06L07 4N06L07 4N06L07
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPI80N06S4L-05 |
Infineon |
Power-Transistor | |
2 | IPI80N06S4-05 |
Infineon |
Power-Transistor | |
3 | IPI80N06S4-07 |
Infineon |
Power-Transistor | |
4 | IPI80N06S2-07 |
Infineon Technologies |
Power-Transistor | |
5 | IPI80N06S2-08 |
Infineon Technologies |
Power-Transistor | |
6 | IPI80N06S2L-05 |
Infineon Technologies |
Power-Transistor | |
7 | IPI80N06S2L-11 |
Infineon Technologies |
Power-Transistor | |
8 | IPI80N06S3L-06 |
Infineon Technologies |
Power-Transistor | |
9 | IPI80N03S4L-03 |
Infineon |
Power-Transistor | |
10 | IPI80N03S4L-04 |
Infineon |
Power-Transistor | |
11 | IPI80N04S2-04 |
Infineon Technologies |
Power-Transistor | |
12 | IPI80N04S2-H4 |
Infineon Technologies |
Power-Transistor |