IPI80N06S4L-07 |
Part Number | IPI80N06S4L-07 |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche... |
Features |
• N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 Product Summary V DS R DS(on),max (SMD version) ID 60 V 6.4 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S4L-07 IPI80N06S4L-07 IPP80N06S4L-07 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N06L07 4N06L07 4N06L07 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V... |
Document |
IPI80N06S4L-07 Data Sheet
PDF 166.63KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPI80N06S4L-05 |
Infineon |
Power-Transistor | |
2 | IPI80N06S4-05 |
Infineon |
Power-Transistor | |
3 | IPI80N06S4-07 |
Infineon |
Power-Transistor | |
4 | IPI80N06S2-07 |
Infineon Technologies |
Power-Transistor | |
5 | IPI80N06S2-08 |
Infineon Technologies |
Power-Transistor |