IPI80N04S2-H4 - Infineon Technologies

IPI80N04S2-H4 Power-Transistor

OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ultra low Rds(on) • 100% Avalanche tested • Green product (RoHS compliant) IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 Product Summary V DS R DS(on),max (SMD version) ID 40 V 3.7 mΩ 80 A PG-TO263-.

Features

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Ultra low Rds(on)
• 100% Avalanche tested
• Green product (RoHS compliant) IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 Product Summary V DS R DS(on),max (SMD version) ID 40 V 3.7 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N04S2-H4 IPP80N04S2-H4 IPI80N04S2-0H4 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Marking 2N04H4 2N04H4 2N04H4 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) .