OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 Product Summary V DS R DS(on),max (SMD version) ID 55 V 8.8 mΩ 77 A PG-TO263-3-2 PG-TO262-3-1 .
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09
Product Summary V DS R DS(on),max (SMD version) ID
55 V 8.8 mΩ 77 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 3N0609 3N0609 3N0609
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10.
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---|---|---|---|---|
1 | IPI70N04S3-07 |
Infineon Technologies |
Power-Transistor | |
2 | IPI70N04S4-06 |
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Power-Transistor | |
3 | IPI70N10S3-12 |
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4 | IPI70N10S3L-12 |
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5 | IPI70N10SL-16 |
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6 | IPI70N12S3-11 |
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7 | IPI70P04P4-09 |
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8 | IPI70R950CE |
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9 | IPI70R950CE |
INCHANGE |
N-Channel MOSFET | |
10 | IPI020N06N |
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11 | IPI023NE7N3G |
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12 | IPI024N06N3 |
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