IPI70N04S4-06 - Infineon Technologies

IPI70N04S4-06 Power-Transistor

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 Product Summary V DS R DS(on),max (SMD version) ID 40 V 6.2 mΩ 70 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Ty.

Features

• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 Product Summary V DS R DS(on),max (SMD version) ID 40 V 6.2 mΩ 70 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB70N04S4-06 IPI70N04S4-06 IPP70N04S4-06 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0406 4N0406 4N0406 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V G.