IPI60R299CP - Infineon Technologies

IPI60R299CP CoolMOS Power Transistor

www.DataSheet4U.com IPI60R299CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.299 Ω 22 nC PG-TO262 .

Features

• Lowest figure-of-merit R ONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.299 Ω 22 nC PG-TO262 CoolMOS CP is specially designed for: Hard switching SMPS topologies Type IPI60R299CP Package PG-TO262 Ordering Code SP000103249 Marking 6R299P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Ava.