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IPI60R299CP |
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| Part Number | IPI60R299CP |
| Manufacturer | INCHANGE |
| Description | ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤0.299Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pulsed 34 A PD Total Dissipation @TC=25℃ 96 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~... |
| Document |
 IPI60R299CP Data Sheet
PDF 282.50KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPI60R299CP |
Infineon Technologies |
CoolMOS Power Transistor |
|
| 2 | IPI60R250CP |
Infineon Technologies AG |
CoolMOS Power Transistor |
|
| 3 | IPI60R250CP |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPI60R280C6 |
Infineon Technologies AG |
MOSFET |
|
| 5 | IPI60R280C6 |
INCHANGE |
N-Channel MOSFET |
|