·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 25 IDM Drain Current-Single Pulsed 82 PD Total Dissipation @TC=25℃ 208 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature .
·Static drain-source on-resistance:
RDS(on) ≤0.125Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Ultra low gate charge
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
25
IDM
Drain Current-Single Pulsed
82
PD
Total Dissipation @TC=25℃
208
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃.
www.DataSheet4U.com IPI60R125CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ONxQg • Ultra low gate .
No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | IPI60R165CP |
Infineon Technologies |
Power Transistor | |
2 | IPI60R165CP |
INCHANGE |
N-Channel MOSFET | |
3 | IPI60R190C6 |
Infineon |
MOSFET | |
4 | IPI60R190C6 |
INCHANGE |
N-Channel MOSFET | |
5 | IPI60R199CP |
Infineon Technologies |
CoolMOS Power Transistor | |
6 | IPI60R199CP |
INCHANGE |
N-Channel MOSFET | |
7 | IPI60R099CP |
Infineon |
Power-Transistor | |
8 | IPI60R099CP |
INCHANGE |
N-Channel MOSFET | |
9 | IPI60R099CPA |
Infineon Technologies |
Power Transistor | |
10 | IPI60R250CP |
Infineon Technologies AG |
CoolMOS Power Transistor | |
11 | IPI60R250CP |
INCHANGE |
N-Channel MOSFET | |
12 | IPI60R280C6 |
Infineon Technologies AG |
MOSFET |