IPG20N06S3L-35 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max5) ID 55 35 20 V mΩ A Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested PG-TDSON-8-4 Type IPG20N06S3L-35 Package PG-TDSON-8-4 Markin.
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested PG-TDSON-8-4
Type IPG20N06S3L-35
Package PG-TDSON-8-4
Marking 3N06L35
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol ID Conditions T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 5) Avalanche current, single pulse5) Gate source voltage4) Power dissipation one cha.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPG20N06S3L-23 |
Infineon |
Power Transistor | |
2 | IPG20N06S2L-35 |
Infineon |
Power Transistor | |
3 | IPG20N06S2L-35A |
Infineon |
Power-Transistor | |
4 | IPG20N06S2L-50 |
Infineon |
Power Transistor | |
5 | IPG20N06S2L-50A |
Infineon |
Power-Transistor | |
6 | IPG20N06S2L-65 |
Infineon |
Power Transistor | |
7 | IPG20N06S2L-65A |
Infineon |
Power-Transistor | |
8 | IPG20N06S4-15 |
Infineon |
Power Transistor | |
9 | IPG20N06S4-15A |
Infineon |
Power-Transistor | |
10 | IPG20N06S4L-11 |
Infineon |
Power Transistor | |
11 | IPG20N06S4L-11A |
Infineon |
Power-Transistor | |
12 | IPG20N06S4L-14 |
Infineon |
Power Transistor |