IPG20N06S2L-65 - Infineon

IPG20N06S2L-65 Power Transistor

® OptiMOS Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPG20N06S2L-65 Product Summary VDS RDS(on),max3) ID 55 V 65 mW 20 A PG-TDSON-8 Type IPG20N06S2L-65 Package PG-TDSON-8 Marking 2N.

Features

• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested IPG20N06S2L-65 Product Summary VDS RDS(on),max3) ID 55 V 65 mW 20 A PG-TDSON-8 Type IPG20N06S2L-65 Package PG-TDSON-8 Marking 2N06L65 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active1) ID T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V Pulsed drain current1) one channel active Avalanche energy, single pulse1, 3) Avalanc.