MOSFET
Metall Oxide Semiconductor Field Effect Transistor
CoolMOS E6
650V CoolMOSTM E6 Power Transistor IPx65R380E6
Data Sheet
Rev. 2.2 Final
Power Management & Multimarket
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for Industrial Applications
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Features
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isc N-Channel MOSFET Transistor IPD65R380E6,IIPD65R380E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPD65R380C6 |
Infineon Technologies |
Power Transistor | |
2 | IPD65R380C6 |
INCHANGE |
N-Channel MOSFET | |
3 | IPD65R190C7 |
Infineon |
MOSFET | |
4 | IPD65R190C7 |
INCHANGE |
N-Channel MOSFET | |
5 | IPD65R1K0CE |
Infineon |
MOSFET | |
6 | IPD65R1K0CE |
INCHANGE |
N-Channel MOSFET | |
7 | IPD65R1K4C6 |
Infineon |
MOSFET | |
8 | IPD65R1K4C6 |
INCHANGE |
N-Channel MOSFET | |
9 | IPD65R1K4CFD |
Infineon |
MOSFET | |
10 | IPD65R1K4CFD |
INCHANGE |
N-Channel MOSFET | |
11 | IPD65R1K5CE |
Infineon |
MOSFET | |
12 | IPD65R1K5CE |
INCHANGE |
N-Channel MOSFET |