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IPD65R380E6 |
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| Part Number | IPD65R380E6 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPD65R380E6,IIPD65R380E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu... |
| Features |
·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Very high commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 10.6 IDM Drain Current-Single Pulsed 29 PD Total Dissipation @TC=25℃ 83 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAME... |
| Document |
 IPD65R380E6 Data Sheet
PDF 238.72KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD65R380E6 |
Infineon Technologies |
Power Transistor |
|
| 2 | IPD65R380C6 |
Infineon Technologies |
Power Transistor |
|
| 3 | IPD65R380C6 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPD65R190C7 |
Infineon |
MOSFET |
|
| 5 | IPD65R190C7 |
INCHANGE |
N-Channel MOSFET |
|