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CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrif.
•ExtremelylowlossesduetoverylowFOMRdson
*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJE.
IPD65R1K4C6 - INCHANGE
isc N-Channel MOSFET Transistor IPD65R1K4C6,IIPD65R1K4C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·En.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPD65R1K4CFD |
Infineon |
MOSFET |
|
| 2 | IPD65R1K4CFD |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPD65R1K0CE |
Infineon |
MOSFET |
|
| 4 | IPD65R1K0CE |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPD65R1K5CE |
Infineon |
MOSFET |
|
| 6 | IPD65R1K5CE |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPD65R190C7 |
Infineon |
MOSFET |
|
| 8 | IPD65R190C7 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IPD65R225C7 |
Infineon |
MOSFET |
|
| 10 | IPD65R225C7 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IPD65R250C6 |
Infineon |
MOSFET |
|
| 12 | IPD65R250C6 |
INCHANGE |
N-Channel MOSFET |
|