IPD30N06S4L-23 - Infineon

IPD30N06S4L-23 Power-Transistor

IPD30N06S4L-23 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 60 23 30 PG-TO252-3-11 V mΩ A Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type IPD30N06S4L-23 Package PG-TO252-3-11 Marking 4N06L23 Maxim.

Features

• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested Type IPD30N06S4L-23 Package PG-TO252-3-11 Marking 4N06L23 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I .