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IPD30N06S4L-23 |
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| Part Number | IPD30N06S4L-23 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | IPD30N06S4L-23 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 60 23 30 PG-TO252-3-11 V mΩ A Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak r... |
| Features |
• N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type IPD30N06S4L-23 Package PG-TO252-3-11 Marking 4N06L23 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I ... |
| Document |
 IPD30N06S4L-23 Data Sheet
PDF 159.82KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD30N06S2-15 |
Infineon |
Power-Transistor |
|
| 2 | IPD30N06S2-23 |
Infineon |
Power-Transistor |
|
| 3 | IPD30N06S2L-13 |
Infineon |
Power-Transistor |
|
| 4 | IPD30N06S2L-23 |
Infineon |
Power-Transistor |
|
| 5 | IPD30N06S3-24 |
Infineon |
Power-Transistor |
|