Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
and charts stated herein. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineo.
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary V DS R DS(on),max (SMD version) ID 55 23 30 V mΩ A
PG-TO252-3-11
Type IPD30N06S2L-23
Package PG-TO252-3-11
Marking 2N06L23
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissip.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPD30N06S2L-13 |
Infineon |
Power-Transistor |
|
| 2 | IPD30N06S2-15 |
Infineon |
Power-Transistor |
|
| 3 | IPD30N06S2-23 |
Infineon |
Power-Transistor |
|
| 4 | IPD30N06S3-24 |
Infineon |
Power-Transistor |
|
| 5 | IPD30N06S3L-20 |
Infineon |
Power-Transistor |
|
| 6 | IPD30N06S4L-23 |
Infineon |
Power-Transistor |
|
| 7 | IPD30N03S2L |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IPD30N03S2L-07 |
Infineon |
Power-Transistor |
|
| 9 | IPD30N03S2L-10 |
Infineon |
Power-Transistor |
|
| 10 | IPD30N03S2L-20 |
Infineon |
Power-Transistor |
|
| 11 | IPD30N03S4L-09 |
Infineon |
Power-Transistor |
|
| 12 | IPD30N03S4L-14 |
Infineon |
Power-Transistor |
|