IPC302NE7N3 - Infineon

IPC302NE7N3 MOSFET

•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPP023NE7N3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitrid.

Features

ecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS Min. 75 2.3 - Values Typ. Max. -3.1 3.8 0.1 1 1 100 1.22) 1003) 0.9 1.2 404) - Unit Note/TestCondition V VGS=0V,ID=1mA V VDS=VGS,ID=270µA µA VGS=0V,VDS=75V nA VGS=20V,VDS=0V mΩ VGS=10V,ID=2.0A V VGS=0V,IF=1A mJ ID =30 A, RGS =25 Ω 1) packaged in a P-TO220-3 (see ref. product) 2)typical.