•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPB038N12N3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlSisystem •Passivation:nitrid.
arameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS Min. 120 2 - Values Typ. Max. -34 0.1 1 1 100 2.52) 1003) 1.0 1.2 454) - Unit Note/TestCondition V VGS=0V,ID=1mA V VDS=VGS,ID=275µA µA VGS=0V,VDS=100V nA VGS=20V,VDS=0V mΩ VGS=10V,ID=2.0A V VGS=0V,IF=1A mJ ID =30 A, RGS =25 Ω 1) packaged in a P-TO263-3 (see ref. product) 2)typicalbaredieRDS(on);VGS=10V 3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPC302N10N3 |
Infineon |
MOSFET | |
2 | IPC302N15N3 |
Infineon |
MOSFET | |
3 | IPC302N08N3 |
Infineon |
MOSFET | |
4 | IPC302N20N3 |
Infineon |
MOSFET | |
5 | IPC302N25N3A |
Infineon |
MOSFET | |
6 | IPC302NE7N3 |
Infineon |
MOSFET | |
7 | IPC300N15N3R |
Infineon |
MOSFET | |
8 | IPC300N20N3 |
Infineon |
MOSFET | |
9 | IPC3401 |
Eaton |
Intelligent Power Control | |
10 | IPC3401-NET |
Eaton |
Intelligent Power Control | |
11 | IPC3402 |
Eaton |
Intelligent Power Control | |
12 | IPC3402-NET |
Eaton |
Intelligent Power Control |