IPC300N20N3 - Infineon

IPC300N20N3 MOSFET

•N-channelenhancementmode •Foradditionalcharacteristicsandmaxratingrefertothedatasheetof IPP110N20N3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlSiCusystem •.

Features

,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS Min. 200 2 - Values Typ. Max. -34 0.1 1 1 100 9.22) 1003) 1.0 1.2 404) - Unit Note/TestCondition V VGS=0V,ID=1mA V VDS=VGS,ID=270µA µA VGS=0V,VDS=160V nA VGS=20V,VDS=0V mΩ VGS=10V,ID=2.0A V VGS=0V,IF=1A mJ ID =30 A, RGS =25 Ω 1) packaged in a P-TO220-3 (see ref. prod.