OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB90N06S4L-04 IPI90N06S4L-04, IPP90N06S4L-04 Product Summary V DS R DS(on),max (SMD version) ID 60 V 3.4 mΩ 90 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220.
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB90N06S4L-04 IPI90N06S4L-04, IPP90N06S4L-04
Product Summary V DS R DS(on),max (SMD version) ID
60 V 3.4 mΩ 90 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB90N06S4L-04 IPI90N06S4L-04 IPP90N06S4L-04
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4N06L04 4N06L04 4N06L04
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPB90N06S4-04 |
Infineon Technologies |
Power Transistor | |
2 | IPB90N04S4-02 |
Infineon |
Power-Transistor | |
3 | IPB90R340C3 |
Infineon |
Power-Transistor | |
4 | IPB90R340C3 |
INCHANGE |
N-Channel MOSFET | |
5 | IPB009N03L |
Infineon |
MOSFET | |
6 | IPB009N03LG |
Infineon Technologies |
MOSFET | |
7 | IPB010N06N |
Infineon |
MOSFET | |
8 | IPB011N04L |
Infineon |
Power Transistor | |
9 | IPB011N04LG |
Infineon Technologies |
Power Transistor | |
10 | IPB011N04NF2S |
Infineon |
MOSFET | |
11 | IPB011N04NG |
Infineon Technologies |
OptiMOS3 Power Transistor | |
12 | IPB014N06N |
Infineon Technologies |
Power Transistor |