IPB120N10S4-03 - Infineon

IPB120N10S4-03 Power-Transistor

IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 OptiMOS®-T2 Power-Transistor Product Summary VDS RDS(on),max (SMD version) Features ID • N-channel - Normal Level - Enhancement mode • AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 100 V 3.5 mW 120 A PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compli.

Features

ID
• N-channel - Normal Level - Enhancement mode
• AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 100 V 3.5 mW 120 A PG-TO220-3-1
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested Type IPB120N10S4-03 IPI120N10S4-03 IPP120N10S4-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N1003 4N1003 4N1003 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pu.