OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 Product Summary V DS R DS(on),max (SMD version) ID 40 V 1.5 mΩ 120 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1.
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01
Product Summary V DS R DS(on),max (SMD version) ID
40 V 1.5 mΩ 120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB120N04S4-01 IPI120N04S4-01 IPP120N04S4-01
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4N0401 4N0401 4N0401
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPB120N04S4-02 |
Infineon |
Power-Transistor | |
2 | IPB120N04S4-04 |
Infineon |
Power-Transistor | |
3 | IPB120N04S4L-02 |
Infineon |
Power-Transistor | |
4 | IPB120N04S3-02 |
Infineon |
Power-Transistor | |
5 | IPB120N03S4L-03 |
Infineon |
Power-Transistor | |
6 | IPB120N06NG |
Infineon Technologies |
Power-Transistor | |
7 | IPB120N06S4-02 |
Infineon |
Power-Transistor | |
8 | IPB120N06S4-03 |
Infineon |
Power-Transistor | |
9 | IPB120N06S4-H1 |
Infineon |
Power-Transistor | |
10 | IPB120N08S4-03 |
Infineon |
Power-Transistor | |
11 | IPB120N08S4-04 |
Infineon |
Power-Transistor | |
12 | IPB120N10S4-03 |
Infineon |
Power-Transistor |