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IPB120N10S4-03 |
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| Part Number | IPB120N10S4-03 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 OptiMOS®-T2 Power-Transistor Product Summary VDS RDS(on),max (SMD version) Features ID • N-channel - Normal Level - Enhancement mode • AEC Q101 qu... |
| Features |
ID
• N-channel - Normal Level - Enhancement mode • AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 100 V 3.5 mW 120 A PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type IPB120N10S4-03 IPI120N10S4-03 IPP120N10S4-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N1003 4N1003 4N1003 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pu... |
| Document |
 IPB120N10S4-03 Data Sheet
PDF 352.34KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB120N10S4-05 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | IPB120N10S4-05 |
Infineon |
Power-Transistor |
|
| 3 | IPB120N03S4L-03 |
Infineon |
Power-Transistor |
|
| 4 | IPB120N04S3-02 |
Infineon |
Power-Transistor |
|
| 5 | IPB120N04S4-01 |
Infineon |
Power-Transistor |
|