Isc N-Channel MOSFET Transistor IPB054N08N3G ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VD.
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
80
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20 80 320
PD
Total Dissipation @TC=25℃
150
Tch
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARAC.
IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G "%&$!"#™3 Power-Transistor Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPB054N08N3 |
Infineon |
Power-Transistor | |
2 | IPB054N06N3 |
INCHANGE |
N-Channel MOSFET | |
3 | IPB054N06N3 |
Infineon |
Power-Transistor | |
4 | IPB054N06N3G |
Infineon |
Power-Transistor | |
5 | IPB050N06N |
Infineon |
Power-Transistor | |
6 | IPB050N06NG |
Infineon Technologies |
Power-Transistor | |
7 | IPB051NE8N |
Infineon |
Power-Transistor | |
8 | IPB051NE8NG |
Infineon |
Power-Transistor | |
9 | IPB052N04N |
Infineon |
Power-Transistor | |
10 | IPB052N04NG |
Infineon Technologies |
Power-Transistor | |
11 | IPB055N03L |
Infineon |
MOSFET | |
12 | IPB055N03L |
INCHANGE |
N-Channel MOSFET |