CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrific.
• Extremely low losses due to very low FOM Rdson
*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ ID,pulse Eoss @ 400V Body diode di/dt
700 0.19 73.
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA65R190E6 ·FEATURES ·With TO-220F packaging ·High speed switc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPA65R190C6 |
Infineon Technologies |
Power Transistor | |
2 | IPA65R190C6 |
INCHANGE |
N-Channel MOSFET | |
3 | IPA65R190C7 |
Infineon |
MOSFET | |
4 | IPA65R190C7 |
INCHANGE |
N-Channel MOSFET | |
5 | IPA65R190CFD |
Infineon Technologies |
CFD2 Power Transistor | |
6 | IPA65R190CFD |
INCHANGE |
N-Channel MOSFET | |
7 | IPA65R110CFD |
Infineon |
MOSFET | |
8 | IPA65R110CFD |
INCHANGE |
N-Channel MOSFET | |
9 | IPA65R125C7 |
Infineon |
MOSFET | |
10 | IPA65R125C7 |
INCHANGE |
N-Channel MOSFET | |
11 | IPA65R150CFD |
Infineon |
MOSFET | |
12 | IPA65R1K0CE |
Infineon |
MOSFET |