Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPA65R190C7 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .
·With TO-220F package
·Low input capacitance and gate charge
·Reduced switching and conduction losses
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
INCHANGE Semiconductor
IPA65R190C7
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
Drain Current-Single Pulsed
±30
8 5
49
PD
Total Dissipation @TC=25℃
30
Tj
Max. Operating Junction Temperature
150
Tstg
Sto.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPA65R190C6 |
Infineon Technologies |
Power Transistor | |
2 | IPA65R190C6 |
INCHANGE |
N-Channel MOSFET | |
3 | IPA65R190CFD |
Infineon Technologies |
CFD2 Power Transistor | |
4 | IPA65R190CFD |
INCHANGE |
N-Channel MOSFET | |
5 | IPA65R190E6 |
Infineon Technologies |
Power Transistor | |
6 | IPA65R190E6 |
INCHANGE |
N-Channel MOSFET | |
7 | IPA65R110CFD |
Infineon |
MOSFET | |
8 | IPA65R110CFD |
INCHANGE |
N-Channel MOSFET | |
9 | IPA65R125C7 |
Infineon |
MOSFET | |
10 | IPA65R125C7 |
INCHANGE |
N-Channel MOSFET | |
11 | IPA65R150CFD |
Infineon |
MOSFET | |
12 | IPA65R1K0CE |
Infineon |
MOSFET |