. . . . . 1 Maximum ratings 3 Thermal characteristics .
•IncreasedMOSFETdv/dtruggedness
•BetterefficiencyduetobestinclassFOMRDS(on)
*EossandRDS(on)
*Qg
•BestinclassRDS(on)/package
•Easytouse/drive
•Pb-freeplating,halogenfreemoldcompound
Benefits
•Enablinghighersystemefficiency
•Enablinghigherfrequency/increasedpowerdensitysolutions
•Systemcost/sizesavingsduetoreducedcoolingrequirements
•Highersystemreliabilityduetoloweroperatingtemperatures
Potentialapplications
PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server, Telecom,UPSandSolar.
Productvalidation
Fullyqualifiedacc.
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switchin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPA65R110CFD |
Infineon |
MOSFET | |
2 | IPA65R110CFD |
INCHANGE |
N-Channel MOSFET | |
3 | IPA65R150CFD |
Infineon |
MOSFET | |
4 | IPA65R190C6 |
Infineon Technologies |
Power Transistor | |
5 | IPA65R190C6 |
INCHANGE |
N-Channel MOSFET | |
6 | IPA65R190C7 |
Infineon |
MOSFET | |
7 | IPA65R190C7 |
INCHANGE |
N-Channel MOSFET | |
8 | IPA65R190CFD |
Infineon Technologies |
CFD2 Power Transistor | |
9 | IPA65R190CFD |
INCHANGE |
N-Channel MOSFET | |
10 | IPA65R190E6 |
Infineon Technologies |
Power Transistor | |
11 | IPA65R190E6 |
INCHANGE |
N-Channel MOSFET | |
12 | IPA65R1K0CE |
Infineon |
MOSFET |