CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrific.
• Extremely low losses due to very low FOM Rdson
*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free plating, halogen free (excluding
TO-252)
Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
IPD60R600E6, IPP60R600E6 IPA60R600E6
drain pin 2
gate pin 1
source pin 3
Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
.
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=60.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPA60R600C6 |
Infineon Technologies |
MOSFET | |
2 | IPA60R600C6 |
INCHANGE |
N-Channel MOSFET | |
3 | IPA60R600CP |
Infineon |
CoolMos Power Transistor | |
4 | IPA60R600CP |
INCHANGE |
N-Channel MOSFET | |
5 | IPA60R600P6 |
Infineon |
MOSFET | |
6 | IPA60R600P6 |
INCHANGE |
N-Channel MOSFET | |
7 | IPA60R600P7 |
Infineon |
MOSFET | |
8 | IPA60R600P7 |
INCHANGE |
N-Channel MOSFET | |
9 | IPA60R650CE |
Infineon Technologies |
MOSFET | |
10 | IPA60R650CE |
INCHANGE |
N-Channel MOSFET | |
11 | IPA60R060C7 |
Infineon |
MOSFET | |
12 | IPA60R060P7 |
Infineon |
Power-Transistor |