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IPA60R600E6 |
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| Part Number | IPA60R600E6 |
| Manufacturer | INCHANGE |
| Description | INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100% avalanche... |
| Features |
·With TO-220F Package ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 7.3 4.6 A IDM Drain Current-Single Pulsed 19 A PD Total Dissipation @TC=25℃ 28 W Tj Max. Operating Junction Temperature -55... |
| Document |
 IPA60R600E6 Data Sheet
PDF 221.15KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPA60R600E6 |
Infineon Technologies |
Power Transistor |
|
| 2 | IPA60R600C6 |
Infineon Technologies |
MOSFET |
|
| 3 | IPA60R600C6 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPA60R600CP |
Infineon |
CoolMos Power Transistor |
|
| 5 | IPA60R600CP |
INCHANGE |
N-Channel MOSFET |
|