IPA60R600C6 - INCHANGE

IPA60R600C6 N-Channel MOSFET

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta.

Features

·With TO-220F Package
·Drain Source Voltage- : VDSS=600V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 7.3 4.6 A IDM Drain Current-Single Pulsed 19 A PD Total Dissipation @TC=25℃ 28 W Tj Max. Operating Junction Temperature -55.