IGC136T170S8RH2 - Infineon

IGC136T170S8RH2 IGBT

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given i.

Features

 1700V Trench & Field stop technology
 low switching losses and saturation losses
 soft turn off
 positive temperature coefficient
 easy paralleling
 Qualified according to JEDEC for target applications Recommended for:
 power modules Applications:
 drives C G E Chip Type VCE ICn1 ) Die Size Package IGC136T170S8RH2 1700V 117.5A 17.72 x 7.7 mm2 sawn on foil 1 ) nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization Mechanical Parameters Die size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer s.