IGC114T170S8RH - Infineon

IGC114T170S8RH IGBT

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given i.

Features

• 1700V Trench + Field stop technology
• low switching losses and saturation losses
• soft turn off
• positive temperature coefficient
• easy paralleling This chip is used for:
• power modules Applications:
• drives Chip Type VCE IC Die Size IGC114T170S8RH 1700V 100A 9.47 x 12.08 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal 9.47 x 12.08 7.254 x 9.858 1.674 x 0.899 mm2 114.4 190 µm 200 mm 219 Photoimide.