IGC109T120T6RH - Infineon

IGC109T120T6RH IGBT

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved Attention please! The information herein is given to describe certain components and shall.

Features

• 1200V Trench + Field stop technology
• low VCE(sat)
• soft turn off
• positive temperature coefficient
• easy paralleling This chip is used for:
• medium / high power modules Applications:
• medium / high power drives C G E Chip Type VCE ICn Die Size IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage env.