IDC08S60CE - Infineon Technologies

IDC08S60CE Schottky Diode

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or c.

Features

Revolutionary semiconductor material Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on the switching behavior
• No forward recovery www.DataSheet4U.net
• High surge current capability
• Applications:
• SMPS, PFC, snubber C A Chip Type IDC08S60CE VBR 600V IF 8A Die Size 1.658 x 1.52 mm2 Package sawn on foil Mechanical Parameter Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Anode metal Cathode metal Die bond Wire bond Reject ink dot size Recommended storage environment 1.658x .