IDC08D120T6M - Infineon

IDC08D120T6M Diode

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved Attention please! The information herein is given to describe certain components and shall .

Features

• 1200V EMCON 4 technology
• soft, fast switching This chip is used for:
• low / medium power modules A
• low reverse recovery charge
• small temperature coefficient C Applications:
• low / medium power drives Chip Type VR IF IDC08D120T6M 1200V 10A Die Size 2.20 x 3.41 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Pad metall Backside metall Die bond Wire bond Reject ink dot size Recommended storage environment 2.20 x 3.41 7.50 / 3.55 mm2 1.246.